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MS2202 Технические параметры
Microchip MS2202 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | Microchip | |
| Mount | Chassis Mount, Surface Mount | |
| Surface Mount | YES | |
| Number of Pins | 4Pins | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 3.5 V | |
| RoHS | Compliant | |
| Package Description | HERMETIC SEALED, M115, 4 PIN | |
| Package Style | DISK BUTTON | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 200 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | MS2202 | |
| Package Shape | ROUND | |
| Manufacturer | Microsemi Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Risk Rank | 5.65 | |
| JESD-609 Code | e0 | |
| Pbfree Code | No | |
| Terminal Finish | TIN LEAD | |
| Max Operating Temperature | 200 °C | |
| Min Operating Temperature | -65 °C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Additional Feature | HIGH RELIABILITY | |
| Subcategory | Other Transistors | |
| Max Power Dissipation | 10 W | |
| Terminal Position | RADIAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Pin Count | 4 | |
| JESD-30 Code | O-CRDB-F4 | |
| Qualification Status | Not Qualified | |
| Polarity | NPN | |
| Configuration | SINGLE | |
| Case Connection | BASE | |
| Output Power | 2 W | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Max Collector Current | 250 mA | |
| Gain | 9 dB | |
| Max Frequency | 1.15 GHz | |
| Transition Frequency | 1.15 GHz | |
| Collector Base Voltage (VCBO) | 45 V | |
| Power Dissipation-Max (Abs) | 10 W | |
| Collector Current-Max (IC) | 0.25 A | |
| DC Current Gain-Min (hFE) | 30 | |
| Highest Frequency Band | L BAND | |
| Radiation Hardening | No | |
| Lead Free | Lead Free |
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