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MSC080SMA120S Технические параметры

Microchip  MSC080SMA120S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Miscellaneous
Марка Microchip
Lifecycle Status Production (Last Updated: 9 months ago)
Mounting Type Surface Mount
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package D3PAK
Continuous Drain Current Id 35
Package Tube
Base Product Number MSC080
Current - Continuous Drain (Id) @ 25℃ 35A
Drive Voltage (Max Rds On, Min Rds On) 20V
Mfr Microchip Technology
Power Dissipation (Max) 182W (Tc)
Product Status Active
MSL MSL 3 - 168 hours
Vds - Drain-Source Breakdown Voltage 1.2 kV
Vgs th - Gate-Source Threshold Voltage 1.8 V
Pd - Power Dissipation 182 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 10 V, + 23 V
Unit Weight 0.218699 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 1
Mounting Styles SMD/SMT
Channel Mode Enhancement
Свойство продукта Значение свойства
Manufacturer Microchip
Brand Microchip Technology / Atmel
Qg - Gate Charge 64 nC
Rds On - Drain-Source Resistance 100 mOhms
RoHS Details
Id - Continuous Drain Current 35 A
Operating Temperature -55°C ~ 175°C (TJ)
Series -
Packaging Tube
Subcategory MOSFETs
Technology SiCFET (Silicon Carbide)
Configuration Single
Number of Channels 1 ChannelChannel
Power Dissipation 182
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100mOhm @ 15A, 20V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 838 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 20 V
Drain to Source Voltage (Vdss) 1200 V
Vgs (Max) +23V, -10V
Product Type MOSFET
Channel Type N
FET Feature -
Product Category MOSFET
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