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SG2013J Технические параметры
Microchip SG2013J technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays | |
| Марка | Microchip | |
| Mounting Type | Through Hole | |
| Package / Case | 16-CDIP (0.300, 7.62mm) | |
| Supplier Device Package | 16-CERDIP | |
| Package | Tray | |
| Current-Collector (Ic) (Max) | 600mA | |
| Base Product Number | SG2013 | |
| Mfr | Microchip Technology | |
| Product Status | Active | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | + 125 C | |
| DC Collector/Base Gain hfe Min | 900 | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Mounting Styles | Through Hole | |
| Manufacturer | Microchip | |
| Brand | Microchip Technology |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Maximum DC Collector Current | 600 mA | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 50 V | |
| Operating Temperature | -55°C ~ 125°C (TA) | |
| Series | - | |
| Subcategory | Transistors | |
| Output Type | Open Collector | |
| Configuration | Array 7 | |
| Power - Max | - | |
| Product Type | Darlington Transistors | |
| Transistor Type | 7 NPN Darlington | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 900 @ 500mA, 2V | |
| Current - Collector Cutoff (Max) | - | |
| Vce Saturation (Max) @ Ib, Ic | 1.9V @ 600µA, 500mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Frequency - Transition | - | |
| Product Category | Darlington Transistors |
Индекс :
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