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TN2130K1-G-VAO Технические параметры

Microchip  TN2130K1-G-VAO technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Microchip
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
RoHS Non-Compliant
Package Tape & Reel (TR)
Base Product Number TN2130
Current - Continuous Drain (Id) @ 25℃ 85mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Mfr Microchip Technology
Power Dissipation (Max) 360mW (Ta)
Свойство продукта Значение свойства
Product Status Active
Operating Temperature -55°C ~ 150°C (TA)
Series -
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 25Ohm @ 120mA, 4.5V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V
Drain to Source Voltage (Vdss) 300 V
Vgs (Max) ±20V
FET Feature -
Просмотр сходства
TN2130K1-G-VAO brand manufacturers: Microchip, Anli stock, TN2130K1-G-VAO reference price.Microchip. TN2130K1-G-VAO parameters, TN2130K1-G-VAO Datasheet PDF and pin diagram description download.You can use the TN2130K1-G-VAO Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find TN2130K1-G-VAO pin diagram and circuit diagram and usage method of function,TN2130K1-G-VAO electronics tutorials.You can download from the Anli.