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Microchip TP5335K1-G-VAO technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Microchip | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Supplier Device Package | SOT-23-3 | |
| Material | Plastic | |
| With label space | Yes | |
| Imprint | Symbols | |
| Transparent | No | |
| Model | Booklet shape | |
| Package | Tape & Reel (TR) | |
| Base Product Number | TP5335 | |
| Current - Continuous Drain (Id) @ 25℃ | 85mA (Tj) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Mfr | Microchip Technology |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Power Dissipation (Max) | 360mW (Ta) | |
| Product Status | Active | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | - | |
| Type | Medium-walled | |
| Technology | MOSFET (Metal Oxide) | |
| FET Type | P-Channel | |
| Rds On (Max) @ Id, Vgs | 30Ohm @ 200mA, 10V | |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 110 pF @ 25 V | |
| Drain to Source Voltage (Vdss) | 350 V | |
| Vgs (Max) | ±20V | |
| FET Feature | - | |
| Width | 2.3 | |
| Length | 5 |