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1N5629AE3 Технические параметры

Microchip Technology  1N5629AE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация TVS - Diodes
Марка
Mounting Type Through Hole
Package / Case DO-13
Supplier Device Package DO-13 (DO-202AA)
Mfr Microchip Technology
Package Bulk
Product Status Active
Breakdown Voltage / V 6.45 V
Maximum Operating Temperature + 175 C
Minimum Operating Temperature - 65 C
Factory Pack QuantityFactory Pack Quantity 1
Ipp - Peak Pulse Current 143 A
Pppm - Peak Pulse Power Dissipation 1.5 kW
Manufacturer Microchip
Brand Microchip Technology
RoHS Details
Series Military, MIL-PRF-19500/500
Operating Temperature -65°C ~ 175°C (TA)
Packaging Bulk
Свойство продукта Значение свойства
Type Zener
Applications General Purpose
Subcategory TVS Diodes / ESD Suppression Diodes
Current Rating 1 mA
Termination Style Axial
Working Voltage 5.8 V
Polarity Unidirectional
Number of Channels 1 ChannelChannel
Power Line Protection No
Voltage - Breakdown (Min) 6.45V
Power - Peak Pulse 1500W (1.5kW)
Current - Peak Pulse (10/1000μs) 143A
Voltage - Clamping (Max) @ Ipp 10.5V
Clamping Voltage 10.5 V
Voltage - Reverse Standoff (Typ) 5.8V
Unidirectional Channels 1
Product Type TVS Diodes
Capacitance @ Frequency -
Product Category ESD Suppressors / TVS Diodes
Просмотр сходства
1N5629AE3 brand manufacturers: Microchip Technology, Anli stock, 1N5629AE3 reference price.Microchip Technology. 1N5629AE3 parameters, 1N5629AE3 Datasheet PDF and pin diagram description download.You can use the 1N5629AE3 TVS - Diodes, DSP Datesheet PDF, find 1N5629AE3 pin diagram and circuit diagram and usage method of function,1N5629AE3 electronics tutorials.You can download from the Anli.