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1N5822US/TR Технические параметры
Microchip Technology 1N5822US/TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | SQ-MELF, B | |
| Supplier Device Package | B, SQ-MELF | |
| Mfr | Microchip Technology | |
| Package | Tape & Reel (TR) | |
| Product Status | Active | |
| Vr - Reverse Voltage | 40 V | |
| Ir - Reverse Current | 100 uA | |
| Maximum Operating Temperature | + 125 C | |
| Minimum Operating Temperature | - 65 C | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Mounting Styles | SMD/SMT | |
| Vrrm - Repetitive Reverse Voltage | 40 V | |
| Manufacturer | Microchip | |
| Brand | Microchip Technology | |
| If - Forward Current | 3 A | |
| RoHS | N |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Ifsm - Forward Surge Current | 80 A | |
| Series | - | |
| Packaging | Reel | |
| Subcategory | Diodes & Rectifiers | |
| Technology | Si | |
| Configuration | Single | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 100 μA @ 40 V | |
| Voltage - Forward (Vf) (Max) @ If | 500 mV @ 3 A | |
| Operating Temperature - Junction | -65°C ~ 125°C | |
| Voltage - DC Reverse (Vr) (Max) | 40 V | |
| Current - Average Rectified (Io) | 3A | |
| Product Type | Schottky Diodes & Rectifiers | |
| Capacitance @ Vr, F | - | |
| Product | Schottky Rectifiers | |
| Vf - Forward Voltage | 700 mV | |
| Product Category | Schottky Diodes & Rectifiers |
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