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- 1N8167USe3
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1N8167USe3 Технические параметры
Microchip Technology 1N8167USe3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | TVS - Diodes | |
| Марка | ||
| Package / Case | SQ-MELF-2 | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | A, SQ-MELF | |
| RoHS | Details | |
| Breakdown Voltage / V | 44.7 V | |
| Pppm - Peak Pulse Power Dissipation | 150 W | |
| Vesd - Voltage ESD Contact | - | |
| Vesd - Voltage ESD Air Gap | - | |
| Cd - Diode Capacitance | 4 pF | |
| Ipp - Peak Pulse Current | 2.32 A | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 175 C | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Package | Bulk | |
| Mfr | Microchip Technology | |
| Product Status | Active |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Series | - | |
| Type | Zener | |
| Applications | General Purpose | |
| Termination Style | SMD/SMT | |
| Working Voltage | 40 V | |
| Polarity | Unidirectional | |
| Number of Channels | 1 ChannelChannel | |
| Power Line Protection | No | |
| Voltage - Breakdown (Min) | 44.7V | |
| Power - Peak Pulse | 150W | |
| Current - Peak Pulse (10/1000μs) | 2.32A | |
| Voltage - Clamping (Max) @ Ipp | 64.6V | |
| Clamping Voltage | 64.6 V | |
| Voltage - Reverse Standoff (Typ) | 40V | |
| Unidirectional Channels | 1 | |
| Capacitance @ Frequency | - |
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