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2N3799 Технические параметры
Microchip Technology 2N3799 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Package / Case | TO-206AA, TO-18-3 Metal Can | |
| Mounting Type | Through Hole | |
| Surface Mount | NO | |
| Supplier Device Package | TO-18 (TO-206AA) | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Product Status | Active | |
| Package | Bulk | |
| Mfr | Microchip Technology | |
| Current-Collector (Ic) (Max) | 50mA | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Manufacturer | Microchip | |
| Brand | Microchip Technology / Atmel | |
| Package Style | CYLINDRICAL | |
| Package Body Material | METAL | |
| Operating Temperature-Min | -65 °C | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 200 °C | |
| Rohs Code | No | |
| Transition Frequency-Nom (fT) | 30 MHz | |
| Manufacturer Part Number | 2N3799 | |
| Package Shape | ROUND | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | CENTRAL SEMICONDUCTOR CORP | |
| Risk Rank | 5.2 | |
| Series | - | |
| Operating Temperature | -65°C ~ 200°C (TJ) | |
| JESD-609 Code | e0 | |
| Pbfree Code | No |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Additional Feature | LOW NOISE | |
| HTS Code | 8541.21.00.95 | |
| Subcategory | Transistors | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | O-MBCY-W3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Power - Max | 1.2W | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | PNP | |
| Product Type | BJTs - Bipolar Transistors | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 500μA, 5V | |
| JEDEC-95 Code | TO-18 | |
| Gain | - | |
| Voltage - Collector Emitter Breakdown (Max) | 60V | |
| Frequency - Transition | - | |
| Power Dissipation-Max (Abs) | 1.2 W | |
| Collector Current-Max (IC) | 0.05 A | |
| DC Current Gain-Min (hFE) | 250 | |
| Collector-Emitter Voltage-Max | 60 V | |
| VCEsat-Max | 0.25 V | |
| Collector-Base Capacitance-Max | 5 pF | |
| Noise Figure (dB Typ @ f) | - | |
| Power Dissipation Ambient-Max | 0.36 W | |
| Product Category | Bipolar Transistors - BJT |
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