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2N5115E3 Технические параметры
Microchip Technology 2N5115E3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - JFETs | |
| Марка | ||
| Package / Case | TO-206AA, TO-18-3 Metal Can | |
| Mounting Type | Through Hole | |
| Surface Mount | NO | |
| Supplier Device Package | TO-18 (TO-206AA) | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Product Status | Active | |
| Package | Bulk | |
| Mfr | Microchip Technology | |
| Vds - Drain-Source Breakdown Voltage | 30 V | |
| Pd - Power Dissipation | 500 mW | |
| Transistor Polarity | P-Channel | |
| Maximum Operating Temperature | + 200 C | |
| Minimum Operating Temperature | - 65 C | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Drain-Source Current at Vgs=0 | - 15 mA to - 60 mA | |
| Mounting Styles | Through Hole | |
| Manufacturer | Microchip | |
| Brand | Microchip Technology | |
| Rds On - Drain-Source Resistance | 100 Ohms | |
| Maximum Drain Gate Voltage | 30 V | |
| RoHS | Details | |
| Vgs - Gate-Source Breakdown Voltage | 30 V | |
| Gate-Source Cutoff Voltage | 3 V to 6 V | |
| Package Description | CYLINDRICAL, O-MBCY-W3 | |
| Package Style | CYLINDRICAL | |
| Package Body Material | METAL | |
| Rohs Code | Yes | |
| Manufacturer Part Number | 2N5115E3 | |
| Package Shape | ROUND | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Ihs Manufacturer | MICROSEMI CORP | |
| Risk Rank | 5.07 | |
| Part Package Code | BCY | |
| Operating Temperature | -65°C ~ 200°C (TJ) | |
| Series | - | |
| Packaging | Bulk | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| HTS Code | 8541.21.00.95 | |
| Subcategory | Transistors | |
| Technology | Si | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | O-MBCY-W3 | |
| Configuration | Single | |
| Operating Mode | DEPLETION MODE | |
| Power - Max | 500 mW | |
| FET Type | P-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 25pF @ 15V | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Polarity/Channel Type | P-CHANNEL | |
| Product Type | JFETs | |
| JEDEC-95 Code | TO-206AA | |
| Drain-source On Resistance-Max | 100 Ω | |
| DS Breakdown Voltage-Min | 30 V | |
| FET Technology | JUNCTION | |
| Feedback Cap-Max (Crss) | 7 pF | |
| Current - Drain (Idss) @ Vds (Vgs=0) | 15 mA @ 15 V | |
| Voltage - Cutoff (VGS off) @ Id | 3 V @ 1 nA | |
| Voltage - Breakdown (V(BR)GSS) | 30 V | |
| Resistance - RDS(On) | 100 Ohms | |
| Product Category | JFET |
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