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APT100GN60LDQ4G Технические параметры

Microchip Technology  APT100GN60LDQ4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Package / Case TO-264-3
Mounting Type Through Hole
Supplier Device Package TO-264 [L]
RoHS Details
Mounting Styles Through Hole
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 1.45 V
Maximum Gate Emitter Voltage - 30 V, + 30 V
Continuous Collector Current at 25 C 229 A
Pd - Power Dissipation 625 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Continuous Collector Current Ic Max 229 A
Gate-Emitter Leakage Current 600 nA
Factory Pack QuantityFactory Pack Quantity 1
Unit Weight 0.373904 oz
Package Tube
Current-Collector (Ic) (Max) 229 A
Base Product Number APT100
Mfr Microchip Technology
Свойство продукта Значение свойства
Product Status Active
Test Conditions 400V, 100A, 1Ohm, 15V
Packaging Tube
Operating Temperature -55°C ~ 175°C (TJ)
Series -
Configuration Single
Power Dissipation 625
Input Type Standard
Power - Max 625 W
Operating Temperature Range - 55 C to + 175 C
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 100A
Continuous Collector Current 229 A
IGBT Type Trench Field Stop
Gate Charge 600 nC
Current - Collector Pulsed (Icm) 300 A
Td (on/off) @ 25°C 31ns/310ns
Switching Energy 4.75mJ (on), 2.675mJ (off)
Height 5.21 mm
Length 26.49 mm
Width 20.5 mm
Просмотр сходства
APT100GN60LDQ4G brand manufacturers: Microchip Technology, Anli stock, APT100GN60LDQ4G reference price.Microchip Technology. APT100GN60LDQ4G parameters, APT100GN60LDQ4G Datasheet PDF and pin diagram description download.You can use the APT100GN60LDQ4G Transistors - IGBTs - Single, DSP Datesheet PDF, find APT100GN60LDQ4G pin diagram and circuit diagram and usage method of function,APT100GN60LDQ4G electronics tutorials.You can download from the Anli.