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APT13GP120BG Технические параметры
Microchip Technology APT13GP120BG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247 [B] | |
| RoHS | Details | |
| Mounting Styles | Through Hole | |
| Collector- Emitter Voltage VCEO Max | 1.2 kV | |
| Maximum Gate Emitter Voltage | - 30 V, + 30 V | |
| Pd - Power Dissipation | 250 W | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Unit Weight | 0.208116 oz | |
| Package | Tube | |
| Current-Collector (Ic) (Max) | 41 A | |
| Base Product Number | APT13GP120 | |
| Mfr | Microchip Technology |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Product Status | Active | |
| Test Conditions | 600V, 13A, 5Ohm, 15V | |
| Packaging | Tube | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | POWER MOS 7® | |
| Configuration | Single | |
| Power Dissipation | 250 | |
| Input Type | Standard | |
| Power - Max | 250 W | |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 13A | |
| Continuous Collector Current | 41 | |
| IGBT Type | PT | |
| Gate Charge | 55 nC | |
| Current - Collector Pulsed (Icm) | 50 A | |
| Td (on/off) @ 25°C | 9ns/28ns | |
| Switching Energy | 115µJ (on), 165µJ (off) |
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