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APT200GN60B2G Технические параметры
Microchip Technology APT200GN60B2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Package / Case | TO-247-3 | |
| Mounting Type | Through Hole | |
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| RoHS | Details | |
| Mounting Styles | Through Hole | |
| Collector- Emitter Voltage VCEO Max | 600 V | |
| Collector-Emitter Saturation Voltage | 1.45 V | |
| Maximum Gate Emitter Voltage | - 20 V, + 20 V | |
| Continuous Collector Current at 25 C | 283 A | |
| Pd - Power Dissipation | 682 W | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 175 C | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Unit Weight | 1.340411 oz | |
| Package | Tube | |
| Current-Collector (Ic) (Max) | 283 A | |
| Base Product Number | APT200 | |
| Mfr | Microchip Technology | |
| Product Status | Active | |
| Test Conditions | 400V, 200A, 1Ohm, 15V | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | APT200GN60B2G | |
| Package Shape | RECTANGULAR | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROSEMI CORP |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Risk Rank | 2.2 | |
| Part Package Code | TO-247AC | |
| Packaging | Tube | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Series | - | |
| ECCN Code | EAR99 | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | Single | |
| Power Dissipation | 682 | |
| Input Type | Standard | |
| Power - Max | 682 W | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-247AC | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Power Dissipation-Max (Abs) | 682 W | |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 200A | |
| Collector Current-Max (IC) | 283 A | |
| Continuous Collector Current | 283 | |
| IGBT Type | Trench Field Stop | |
| Collector-Emitter Voltage-Max | 600 V | |
| Gate Charge | 1180 nC | |
| Current - Collector Pulsed (Icm) | 600 A | |
| Td (on/off) @ 25°C | 50ns/560ns | |
| Switching Energy | 13mJ (on), 11mJ (off) | |
| Gate-Emitter Voltage-Max | 20 V | |
| Gate-Emitter Thr Voltage-Max | 6.5 V |
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