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APT30GT60BRDQ2G Технические параметры

Microchip Technology  APT30GT60BRDQ2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Package / Case TO-247-3
Mounting Type Through Hole
Surface Mount NO
Supplier Device Package TO-247 [B]
Number of Terminals 3Terminals
Transistor Element Material SILICON
RoHS Details
Mounting Styles Through Hole
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 2 V
Maximum Gate Emitter Voltage - 30 V, + 30 V
Continuous Collector Current at 25 C 64 A
Pd - Power Dissipation 250 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Factory Pack QuantityFactory Pack Quantity 1
Unit Weight 1.340411 oz
Package Tube
Current-Collector (Ic) (Max) 64 A
Base Product Number APT30GT60
Mfr Microchip Technology
Product Status Active
Test Conditions 400V, 30A, 10Ohm, 15V
Package Description FLANGE MOUNT, R-PSFM-T3
Package Style FLANGE MOUNT
Package Body Material PLASTIC/EPOXY
Turn-on Time-Nom (ton) 32 ns
Turn-off Time-Nom (toff) 345 ns
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number APT30GT60BRDQ2G
Package Shape RECTANGULAR
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer MICROSEMI CORP
Свойство продукта Значение свойства
Risk Rank 1.17
Part Package Code TO-247AD
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Series Thunderbolt IGBT®
JESD-609 Code e1
Pbfree Code Yes
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration Single
Power Dissipation 250
Case Connection COLLECTOR
Input Type Standard
Power - Max 250 W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 600 V
Power Dissipation-Max (Abs) 198 W
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
Collector Current-Max (IC) 64 A
Continuous Collector Current 64
IGBT Type NPT
Collector-Emitter Voltage-Max 600 V
Gate Charge 7.5 nC
Current - Collector Pulsed (Icm) 110 A
Td (on/off) @ 25°C 12ns/225ns
Switching Energy 80µJ (on), 605µJ (off)
Gate-Emitter Voltage-Max 30 V
Gate-Emitter Thr Voltage-Max 5 V
Reverse Recovery Time (trr) 22 ns
Просмотр сходства
APT30GT60BRDQ2G brand manufacturers: Microchip Technology, Anli stock, APT30GT60BRDQ2G reference price.Microchip Technology. APT30GT60BRDQ2G parameters, APT30GT60BRDQ2G Datasheet PDF and pin diagram description download.You can use the APT30GT60BRDQ2G Transistors - IGBTs - Single, DSP Datesheet PDF, find APT30GT60BRDQ2G pin diagram and circuit diagram and usage method of function,APT30GT60BRDQ2G electronics tutorials.You can download from the Anli.