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APT33GF120B2RDQ2G Технические параметры

Microchip Technology  APT33GF120B2RDQ2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Lifecycle Status Production (Last Updated: 2 months ago)
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Mount Through Hole
Surface Mount NO
Number of Pins 3Pins
Number of Terminals 3Terminals
Transistor Element Material SILICON
RoHS Details
Mounting Styles Through Hole
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 2.5 V
Maximum Gate Emitter Voltage - 30 V, + 30 V
Continuous Collector Current at 25 C 64 A
Pd - Power Dissipation 357 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Factory Pack QuantityFactory Pack Quantity 1
Package Tube
Current-Collector (Ic) (Max) 64 A
Base Product Number APT33GF120
Mfr Microchip Technology
Product Status Active
Test Conditions 800V, 25A, 4.3Ohm, 15V
Collector-Emitter Breakdown Voltage 1.2 kV
Voltage Rating (DC) 1.2 kV
Package Description ROHS COMPLIANT, T-MAX, 3 PIN
Package Style IN-LINE
Package Body Material PLASTIC/EPOXY
Turn-on Time-Nom (ton) 31 ns
Turn-off Time-Nom (toff) 355 ns
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number APT33GF120B2RDQ2G
Package Shape RECTANGULAR
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer MICROSEMI CORP
Свойство продукта Значение свойства
Risk Rank 1.48
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Series -
JESD-609 Code e1
Pbfree Code Yes
Terminal Finish TIN SILVER COPPER
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Max Power Dissipation 357 W
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Current Rating 64 A
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Configuration Single
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 357 W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2 kV
Max Collector Current 64 A
Voltage - Collector Emitter Breakdown (Max) 1200 V
Power Dissipation-Max (Abs) 357 W
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 25A
Collector Current-Max (IC) 64 A
IGBT Type NPT
Collector-Emitter Voltage-Max 1200 V
Gate Charge 170 nC
Current - Collector Pulsed (Icm) 75 A
Td (on/off) @ 25°C 14ns/185ns
Switching Energy 1.315mJ (on), 1.515mJ (off)
Gate-Emitter Voltage-Max 30 V
Gate-Emitter Thr Voltage-Max 6.5 V
Radiation Hardening No
Lead Free Lead Free
Просмотр сходства
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