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APT35GA90B Технические параметры

Microchip Technology  APT35GA90B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Lifecycle Status Production (Last Updated: 2 months ago)
Mounting Type Through Hole
Package / Case TO-247-3
Mount Through Hole
Supplier Device Package TO-247 [B]
Unit Weight 0.208116 oz
Factory Pack QuantityFactory Pack Quantity 1
Maximum Operating Temperature + 150 C
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 290 W
Continuous Collector Current at 25 C 63 A
Maximum Gate Emitter Voltage - 30 V, + 30 V
Collector-Emitter Saturation Voltage 2.5 V
Collector- Emitter Voltage VCEO Max 900 V
Mounting Styles Through Hole
RoHS Details
Package Tube
Current-Collector (Ic) (Max) 63 A
Base Product Number APT35GA90
Mfr Microchip Technology
Product Status Active
Свойство продукта Значение свойства
Test Conditions 600V, 18A, 10Ohm, 15V
Collector-Emitter Breakdown Voltage 900 V
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Series POWER MOS 8™
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Max Power Dissipation 290 W
Configuration Single
Element Configuration Single
Input Type Standard
Power - Max 290 W
Collector Emitter Voltage (VCEO) 900 V
Max Collector Current 63 A
Voltage - Collector Emitter Breakdown (Max) 900 V
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 18A
IGBT Type PT
Gate Charge 84 nC
Current - Collector Pulsed (Icm) 105 A
Td (on/off) @ 25°C 12ns/104ns
Switching Energy 642µJ (on), 382µJ (off)
Radiation Hardening No
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