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Microchip Technology APT35GA90B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Lifecycle Status | Production (Last Updated: 2 months ago) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Mount | Through Hole | |
| Supplier Device Package | TO-247 [B] | |
| Unit Weight | 0.208116 oz | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Maximum Operating Temperature | + 150 C | |
| Minimum Operating Temperature | - 55 C | |
| Pd - Power Dissipation | 290 W | |
| Continuous Collector Current at 25 C | 63 A | |
| Maximum Gate Emitter Voltage | - 30 V, + 30 V | |
| Collector-Emitter Saturation Voltage | 2.5 V | |
| Collector- Emitter Voltage VCEO Max | 900 V | |
| Mounting Styles | Through Hole | |
| RoHS | Details | |
| Package | Tube | |
| Current-Collector (Ic) (Max) | 63 A | |
| Base Product Number | APT35GA90 | |
| Mfr | Microchip Technology | |
| Product Status | Active |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Test Conditions | 600V, 18A, 10Ohm, 15V | |
| Collector-Emitter Breakdown Voltage | 900 V | |
| Packaging | Tube | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | POWER MOS 8™ | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C | |
| Max Power Dissipation | 290 W | |
| Configuration | Single | |
| Element Configuration | Single | |
| Input Type | Standard | |
| Power - Max | 290 W | |
| Collector Emitter Voltage (VCEO) | 900 V | |
| Max Collector Current | 63 A | |
| Voltage - Collector Emitter Breakdown (Max) | 900 V | |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 18A | |
| IGBT Type | PT | |
| Gate Charge | 84 nC | |
| Current - Collector Pulsed (Icm) | 105 A | |
| Td (on/off) @ 25°C | 12ns/104ns | |
| Switching Energy | 642µJ (on), 382µJ (off) | |
| Radiation Hardening | No |