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APT35GN120BG Технические параметры

Microchip Technology  APT35GN120BG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Package / Case TO-247-3
Mounting Type Through Hole
Supplier Device Package TO-247 [B]
RoHS Details
Mounting Styles Through Hole
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 1.7 V
Maximum Gate Emitter Voltage - 30 V, + 30 V
Continuous Collector Current at 25 C 94 A
Pd - Power Dissipation 379 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Continuous Collector Current Ic Max 94 A
Gate-Emitter Leakage Current 600 nA
Factory Pack QuantityFactory Pack Quantity 1
Unit Weight 1.340411 oz
Package Tube
Current-Collector (Ic) (Max) 94 A
Base Product Number APT35GN120
Mfr Microchip Technology
Свойство продукта Значение свойства
Product Status Active
Test Conditions 800V, 35A, 2.2Ohm, 15V
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Series -
Configuration Single
Power Dissipation 379
Input Type Standard
Power - Max 379 W
Operating Temperature Range - 55 C to + 150 C
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 35A
Continuous Collector Current 94 A
IGBT Type NPT, Trench Field Stop
Gate Charge 220 nC
Current - Collector Pulsed (Icm) 105 A
Td (on/off) @ 25°C 24ns/300ns
Switching Energy 2.315mJ (off)
Height 5.31 mm
Length 21.46 mm
Width 16.26 mm
Просмотр сходства
APT35GN120BG brand manufacturers: Microchip Technology, Anli stock, APT35GN120BG reference price.Microchip Technology. APT35GN120BG parameters, APT35GN120BG Datasheet PDF and pin diagram description download.You can use the APT35GN120BG Transistors - IGBTs - Single, DSP Datesheet PDF, find APT35GN120BG pin diagram and circuit diagram and usage method of function,APT35GN120BG electronics tutorials.You can download from the Anli.