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APT40GR120B2D30 Технические параметры

Microchip Technology  APT40GR120B2D30 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Package / Case TO-247-3
Mounting Type Through Hole
Supplier Device Package TO-247-3
RoHS Details
Mounting Styles Through Hole
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 2.5 V
Maximum Gate Emitter Voltage - 30 V, + 30 V
Continuous Collector Current at 25 C 88 A
Pd - Power Dissipation 500 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Continuous Collector Current Ic Max 88 A
Gate-Emitter Leakage Current 250 nA
Factory Pack QuantityFactory Pack Quantity 1
Tradename Ultra Fast NPT-IGBT
Unit Weight 1.340411 oz
Package Tube
Current-Collector (Ic) (Max) 88 A
Base Product Number APT40GR120
Свойство продукта Значение свойства
Mfr Microchip Technology
Product Status Active
Test Conditions 600V, 40A, 4.3Ohm, 15V
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Series -
Configuration Single
Power Dissipation 500
Input Type Standard
Power - Max 500 W
Operating Temperature Range - 55 C to + 150 C
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 40A
Continuous Collector Current 88 A
IGBT Type NPT
Gate Charge 210 nC
Current - Collector Pulsed (Icm) 160 A
Td (on/off) @ 25°C 22ns/163ns
Switching Energy 1.38mJ (on), 906µJ (off)
Height 5.31 mm
Length 21.46 mm
Width 16.26 mm
Просмотр сходства
APT40GR120B2D30 brand manufacturers: Microchip Technology, Anli stock, APT40GR120B2D30 reference price.Microchip Technology. APT40GR120B2D30 parameters, APT40GR120B2D30 Datasheet PDF and pin diagram description download.You can use the APT40GR120B2D30 Transistors - IGBTs - Single, DSP Datesheet PDF, find APT40GR120B2D30 pin diagram and circuit diagram and usage method of function,APT40GR120B2D30 electronics tutorials.You can download from the Anli.