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APT45GP120B2DQ2G Технические параметры

Microchip Technology  APT45GP120B2DQ2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Package / Case T-Max-3
Mounting Type Through Hole
RoHS Details
Mounting Styles Through Hole
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 3.3 V
Maximum Gate Emitter Voltage - 30 V, + 30 V
Continuous Collector Current at 25 C 113 A
Pd - Power Dissipation 625 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Continuous Collector Current Ic Max 113 A
Gate-Emitter Leakage Current 100 nA
Factory Pack QuantityFactory Pack Quantity 1
Tradename POWER MOS 7 IGBT
Package Tube
Current-Collector (Ic) (Max) 113 A
Base Product Number APT45GP120
Mfr Microchip Technology
Свойство продукта Значение свойства
Product Status Active
Test Conditions 600V, 45A, 5Ohm, 15V
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Series POWER MOS 7®
Configuration Single
Input Type Standard
Power - Max 625 W
Operating Temperature Range - 55 C to + 150 C
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 45A
Continuous Collector Current 113 A
IGBT Type PT
Gate Charge 185 nC
Current - Collector Pulsed (Icm) 170 A
Td (on/off) @ 25°C 18ns/100ns
Switching Energy 900µJ (on), 905µJ (off)
Height 5.31 mm
Length 21.46 mm
Width 16.26 mm
Просмотр сходства
APT45GP120B2DQ2G brand manufacturers: Microchip Technology, Anli stock, APT45GP120B2DQ2G reference price.Microchip Technology. APT45GP120B2DQ2G parameters, APT45GP120B2DQ2G Datasheet PDF and pin diagram description download.You can use the APT45GP120B2DQ2G Transistors - IGBTs - Single, DSP Datesheet PDF, find APT45GP120B2DQ2G pin diagram and circuit diagram and usage method of function,APT45GP120B2DQ2G electronics tutorials.You can download from the Anli.