Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
APT45GP120JDQ2 Технические параметры
Microchip Technology APT45GP120JDQ2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Lifecycle Status | Production (Last Updated: 2 months ago) | |
| Mounting Type | Chassis Mount | |
| Package / Case | ISOTOP | |
| Mount | Chassis Mount, Screw | |
| Surface Mount | NO | |
| Number of Pins | 4Pins | |
| Supplier Device Package | ISOTOP® | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Details | |
| Mounting Styles | Screw Mounts | |
| Collector- Emitter Voltage VCEO Max | 1.2 kV | |
| Collector-Emitter Saturation Voltage | 3.3 V | |
| Maximum Gate Emitter Voltage | - 30 V, + 30 V | |
| Continuous Collector Current at 25 C | 75 A | |
| Pd - Power Dissipation | 329 W | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Package | Tube | |
| Current-Collector (Ic) (Max) | 75 A | |
| Base Product Number | APT45GP120 | |
| Mfr | Microchip Technology | |
| Product Status | Active | |
| Collector-Emitter Breakdown Voltage | 1.2 kV | |
| Voltage Rating (DC) | 1.2 kV | |
| Package Description | ISOTOP-4 PIN | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | PLASTIC/EPOXY | |
| Turn-on Time-Nom (ton) | 47 ns | |
| Manufacturer Package Code | ISOTOP | |
| Turn-off Time-Nom (toff) | 230 ns | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | APT45GP120JDQ2 | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROSEMI CORP |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Risk Rank | 1.5 | |
| Part Package Code | ISOTOP | |
| Packaging | Tube | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | POWER MOS 7® | |
| JESD-609 Code | e1 | |
| Pbfree Code | Yes | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Max Power Dissipation | 329 W | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Current Rating | 75 A | |
| Pin Count | 4 | |
| JESD-30 Code | R-PUFM-X4 | |
| Qualification Status | Not Qualified | |
| Configuration | Single | |
| Element Configuration | Single | |
| Case Connection | ISOLATED | |
| Power - Max | 329 W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Input | Standard | |
| Collector Emitter Voltage (VCEO) | 1.2 kV | |
| Max Collector Current | 75 A | |
| Current - Collector Cutoff (Max) | 750 µA | |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
| Input Capacitance | 4 nF | |
| Power Dissipation-Max (Abs) | 329 W | |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 45A | |
| Collector Current-Max (IC) | 75 A | |
| IGBT Type | PT | |
| Collector-Emitter Voltage-Max | 1200 V | |
| NTC Thermistor | No | |
| Gate-Emitter Voltage-Max | 30 V | |
| Input Capacitance (Cies) @ Vce | 4 nF @ 25 V | |
| Radiation Hardening | No | |
| Lead Free | Lead Free |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ