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Microchip Technology APT50GF120B2RG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Lifecycle Status | Production (Last Updated: 2 months ago) | |
| Package / Case | T-Max-3 | |
| Mounting Type | Through Hole | |
| Mount | Through Hole | |
| Number of Pins | 3Pins | |
| RoHS | Details | |
| Mounting Styles | Through Hole | |
| Collector- Emitter Voltage VCEO Max | 1.2 kV | |
| Collector-Emitter Saturation Voltage | 2.5 V | |
| Maximum Gate Emitter Voltage | - 20 V, + 20 V | |
| Continuous Collector Current at 25 C | 135 A | |
| Pd - Power Dissipation | 781 W | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Gate-Emitter Leakage Current | 100 nA | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Package | Tube | |
| Current-Collector (Ic) (Max) | 135 A | |
| Base Product Number | APT50GF120 | |
| Mfr | Microchip Technology | |
| Product Status | Active | |
| Test Conditions | 800V, 50A, 1Ohm, 15V | |
| Collector-Emitter Breakdown Voltage | 1.2 kV | |
| Voltage Rating (DC) | 1.2 kV | |
| Turn Off Delay Time | 260 ns |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Packaging | Tube | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | - | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C | |
| Max Power Dissipation | 781 W | |
| Current Rating | 156 A | |
| Configuration | Single | |
| Element Configuration | Single | |
| Power Dissipation | 781 | |
| Input Type | Standard | |
| Turn On Delay Time | 25 ns | |
| Power - Max | 781 W | |
| Collector Emitter Voltage (VCEO) | 1.2 kV | |
| Max Collector Current | 135 A | |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 50A | |
| Max Junction Temperature (Tj) | 150 °C | |
| Continuous Collector Current | 135 | |
| IGBT Type | NPT | |
| Gate Charge | 340 nC | |
| Current - Collector Pulsed (Icm) | 150 A | |
| Td (on/off) @ 25°C | 25ns/260ns | |
| Switching Energy | 3.6mJ (on), 2.64mJ (off) | |
| Height | 25.96 mm | |
| Radiation Hardening | No | |
| Lead Free | Lead Free |