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APT50GS60BRDQ2G Технические параметры

Microchip Technology  APT50GS60BRDQ2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Package / Case TO-247-3
Mounting Type Through Hole
Supplier Device Package TO-247 [B]
RoHS Details
Mounting Styles Through Hole
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 2.8 V
Maximum Gate Emitter Voltage - 30 V, + 30 V
Continuous Collector Current at 25 C 93 A
Pd - Power Dissipation 415 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Continuous Collector Current Ic Max 93 A
Gate-Emitter Leakage Current 100 nA
Factory Pack QuantityFactory Pack Quantity 1
Tradename Thunderbolt HS
Unit Weight 1.340411 oz
Package Tube
Current-Collector (Ic) (Max) 93 A
Base Product Number APT50GS60
Свойство продукта Значение свойства
Mfr Microchip Technology
Product Status Active
Test Conditions 400V, 40A, 4.7Ohm, 15V
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Series Thunderbolt IGBT®
Configuration Single
Input Type Standard
Power - Max 415 W
Operating Temperature Range - 55 C to + 150 C
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 3.15V @ 15V, 50A
Continuous Collector Current 93 A
IGBT Type NPT
Gate Charge 235 nC
Current - Collector Pulsed (Icm) 195 A
Td (on/off) @ 25°C 16ns/225ns
Switching Energy 755µJ (off)
Reverse Recovery Time (trr) 25 ns
Height 5.31 mm
Length 21.46 mm
Width 16.26 mm
Просмотр сходства
APT50GS60BRDQ2G brand manufacturers: Microchip Technology, Anli stock, APT50GS60BRDQ2G reference price.Microchip Technology. APT50GS60BRDQ2G parameters, APT50GS60BRDQ2G Datasheet PDF and pin diagram description download.You can use the APT50GS60BRDQ2G Transistors - IGBTs - Single, DSP Datesheet PDF, find APT50GS60BRDQ2G pin diagram and circuit diagram and usage method of function,APT50GS60BRDQ2G electronics tutorials.You can download from the Anli.