Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Microchip Technology APT54GA60B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Lifecycle Status | Production (Last Updated: 2 months ago) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Mount | Through Hole | |
| Supplier Device Package | TO-247 [B] | |
| RoHS | Details | |
| Mounting Styles | Through Hole | |
| Collector- Emitter Voltage VCEO Max | 600 V | |
| Collector-Emitter Saturation Voltage | 2 V | |
| Maximum Gate Emitter Voltage | - 30 V, + 30 V | |
| Continuous Collector Current at 25 C | 96 A | |
| Pd - Power Dissipation | 416 W | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Package | Tube | |
| Current-Collector (Ic) (Max) | 96 A | |
| Base Product Number | APT54GA60 | |
| Mfr | Microchip Technology | |
| Product Status | Active |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Test Conditions | 400V, 32A, 4.7Ohm, 15V | |
| Collector-Emitter Breakdown Voltage | 600 V | |
| Packaging | Tube | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | POWER MOS 8™ | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C | |
| Max Power Dissipation | 416 W | |
| Configuration | Single | |
| Element Configuration | Single | |
| Input Type | Standard | |
| Power - Max | 416 W | |
| Collector Emitter Voltage (VCEO) | 600 V | |
| Max Collector Current | 96 A | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 32A | |
| IGBT Type | PT | |
| Gate Charge | 158 nC | |
| Current - Collector Pulsed (Icm) | 161 A | |
| Td (on/off) @ 25°C | 17ns/112ns | |
| Switching Energy | 534µJ (on), 466µJ (off) | |
| Radiation Hardening | No |