[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

APT64GA90LD30 Технические параметры

Microchip Technology  APT64GA90LD30 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Lifecycle Status Production (Last Updated: 2 months ago)
Package / Case TO-264-3
Mounting Type Through Hole
Mount Through Hole
Supplier Device Package TO-264 [L]
Weight 10.6 g
RoHS Details
Mounting Styles Through Hole
Collector- Emitter Voltage VCEO Max 900 V
Collector-Emitter Saturation Voltage 2.5 V
Maximum Gate Emitter Voltage - 20 V, + 20 V
Continuous Collector Current at 25 C 117 A
Pd - Power Dissipation 500 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Continuous Collector Current Ic Max 117 A
Gate-Emitter Leakage Current 100 nA
Factory Pack QuantityFactory Pack Quantity 1
Tradename POWER MOS 8
Unit Weight 0.373904 oz
Package Tube
Current-Collector (Ic) (Max) 117 A
Base Product Number APT64GA90
Mfr Microchip Technology
Product Status Active
Test Conditions 600V, 38A, 4.7Ohm, 15V
Свойство продукта Значение свойства
Collector-Emitter Breakdown Voltage 900 V
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Series POWER MOS 8™
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Max Power Dissipation 500 W
Configuration Single
Element Configuration Single
Power Dissipation 500
Input Type Standard
Power - Max 500 W
Collector Emitter Voltage (VCEO) 900 V
Max Collector Current 117 A
Operating Temperature Range - 55 C to + 150 C
Voltage - Collector Emitter Breakdown (Max) 900 V
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 38A
Continuous Collector Current 117 A
IGBT Type PT
Gate Charge 162 nC
Current - Collector Pulsed (Icm) 193 A
Td (on/off) @ 25°C 18ns/131ns
Switching Energy 1192µJ (on), 1088µJ (off)
Height 5.21 mm
Length 26.49 mm
Width 20.5 mm
Radiation Hardening No
Просмотр сходства
APT64GA90LD30 brand manufacturers: Microchip Technology, Anli stock, APT64GA90LD30 reference price.Microchip Technology. APT64GA90LD30 parameters, APT64GA90LD30 Datasheet PDF and pin diagram description download.You can use the APT64GA90LD30 Transistors - IGBTs - Single, DSP Datesheet PDF, find APT64GA90LD30 pin diagram and circuit diagram and usage method of function,APT64GA90LD30 electronics tutorials.You can download from the Anli.