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APT65GP60B2G Технические параметры
Microchip Technology APT65GP60B2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Package / Case | TO-247-3 | |
| Mounting Type | Through Hole | |
| RoHS | Details | |
| Mounting Styles | Through Hole | |
| Collector- Emitter Voltage VCEO Max | 600 V | |
| Maximum Gate Emitter Voltage | - 20 V, + 20 V | |
| Pd - Power Dissipation | 833 W | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Unit Weight | 1.340411 oz | |
| Package | Tube | |
| Current-Collector (Ic) (Max) | 100 A | |
| Base Product Number | APT65GP60 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Mfr | Microchip Technology | |
| Product Status | Active | |
| Test Conditions | 400V, 65A, 5Ohm, 15V | |
| Packaging | Tube | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | POWER MOS 7® | |
| Configuration | Single | |
| Input Type | Standard | |
| Power - Max | 833 W | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 65A | |
| IGBT Type | PT | |
| Gate Charge | 210 nC | |
| Current - Collector Pulsed (Icm) | 250 A | |
| Td (on/off) @ 25°C | 30ns/91ns | |
| Switching Energy | 605µJ (on), 896µJ (off) |
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