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APT75GN60BDQ2G Технические параметры

Microchip Technology  APT75GN60BDQ2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Mfr Microchip Technology
Package Tube
Product Status Active
Current-Collector (Ic) (Max) 155 A
Test Conditions 400V, 75A, 1Ohm, 15V
Base Product Number APT75GN60
Collector- Emitter Voltage VCEO Max 600 V
RoHS Details
Brand Microchip Technology / Atmel
Manufacturer Microchip
Mounting Styles Through Hole
Continuous Collector Current at 25 C 155 A
Factory Pack QuantityFactory Pack Quantity 1
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Свойство продукта Значение свойства
Pd - Power Dissipation 536 W
Maximum Gate Emitter Voltage - 20 V, + 20 V
Series -
Operating Temperature -55°C ~ 175°C (TJ)
Packaging Tube
Subcategory IGBTs
Configuration Single
Input Type Standard
Power - Max 536 W
Product Type IGBT Transistors
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 75A
IGBT Type Trench Field Stop
Gate Charge 485 nC
Current - Collector Pulsed (Icm) 225 A
Td (on/off) @ 25°C 47ns/385ns
Switching Energy 2.5mJ (on), 2.14mJ (off)
Reverse Recovery Time (trr) 25 ns
Product Category IGBT Transistors
Просмотр сходства
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