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Microchip Technology APT80GA90S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | |
| Supplier Device Package | D3PAK | |
| Mfr | Microchip Technology | |
| Product Status | Active | |
| Package | Tube | |
| Current-Collector (Ic) (Max) | 145 A | |
| Test Conditions | 600V, 47A, 4.7Ohm, 15V | |
| Base Product Number | APT80GA90 | |
| Collector-Emitter Saturation Voltage | 2.5 | |
| Maximum Gate Emitter Voltage | - 20 V, + 20 V | |
| Pd - Power Dissipation | 625 W | |
| Maximum Operating Temperature | + 150 C | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Continuous Collector Current at 25 C | 145 A | |
| Mounting Styles | SMD/SMT | |
| Manufacturer | Microchip | |
| Brand | Microchip Technology / Atmel |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Continuous Collector Current Ic Max | 239 A | |
| Collector- Emitter Voltage VCEO Max | 900 V | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Packaging | Tube | |
| Subcategory | IGBTs | |
| Technology | Si | |
| Configuration | Single | |
| Power Dissipation | 625 | |
| Input Type | Standard | |
| Power - Max | 625 W | |
| Product Type | IGBT Transistors | |
| Voltage - Collector Emitter Breakdown (Max) | 900 V | |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 47A | |
| Continuous Collector Current | 145 | |
| IGBT Type | PT | |
| Gate Charge | 200 nC | |
| Current - Collector Pulsed (Icm) | 239 A | |
| Td (on/off) @ 25°C | 18ns/149ns | |
| Switching Energy | 1.625mJ (on), 1.389mJ (off) | |
| Product Category | IGBT Transistors |