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APTGF50DH120T3G Технические параметры

Microchip Technology  APTGF50DH120T3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Package / Case SP3-32
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Number of Pins 16Pins
Supplier Device Package SP3
RoHS Details
Collector- Emitter Voltage VCEO Max 1200 V
Collector-Emitter Saturation Voltage 3.2 V
Continuous Collector Current at 25 C 70 A
Gate-Emitter Leakage Current 100 nA
Pd - Power Dissipation 312 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Maximum Gate Emitter Voltage 20 V
Mounting Styles SMD/SMT
Factory Pack QuantityFactory Pack Quantity 50
Package Bulk
Current-Collector (Ic) (Max) 70 A
Mfr Microchip Technology
Свойство продукта Значение свойства
Product Status Obsolete
Collector-Emitter Breakdown Voltage 1.2 kV
Operating Temperature -
Series -
Max Operating Temperature 150 °C
Min Operating Temperature -40 °C
Max Power Dissipation 312 W
Configuration Asymmetrical Bridge
Element Configuration Dual
Power - Max 312 W
Input Standard
Collector Emitter Voltage (VCEO) 1.2 kV
Max Collector Current 70 A
Current - Collector Cutoff (Max) 250 µA
Voltage - Collector Emitter Breakdown (Max) 1200 V
Input Capacitance 3.45 nF
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 50A
IGBT Type NPT
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 3.45 nF @ 25 V
Product IGBT Silicon Modules
Просмотр сходства
APTGF50DH120T3G brand manufacturers: Microchip Technology, Anli stock, APTGF50DH120T3G reference price.Microchip Technology. APTGF50DH120T3G parameters, APTGF50DH120T3G Datasheet PDF and pin diagram description download.You can use the APTGF50DH120T3G Transistors - IGBTs - Modules, DSP Datesheet PDF, find APTGF50DH120T3G pin diagram and circuit diagram and usage method of function,APTGF50DH120T3G electronics tutorials.You can download from the Anli.