Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Microchip Technology APTGL475U120DAG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Modules | |
| Марка | ||
| Package / Case | SP6 | |
| Mounting Type | Chassis Mount | |
| Supplier Device Package | SP6 | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 1.2 kV | |
| Pd - Power Dissipation | 2.307 kW | |
| Minimum Operating Temperature | - 40 C | |
| Maximum Operating Temperature | + 100 C | |
| Maximum Gate Emitter Voltage | 20 V | |
| Mounting Styles | Chassis Mount | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Unit Weight | 3.880136 oz | |
| Package | Bulk | |
| Current-Collector (Ic) (Max) | 610 A | |
| Base Product Number | APTGL475 | |
| Mfr | Microchip Technology | |
| Product Status | Active | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | APTGL475U120DAG | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Ihs Manufacturer | MICROSEMI CORP | |
| Risk Rank | 5.69 | |
| Packaging | Tube | |
| Operating Temperature | -40°C ~ 175°C (TJ) | |
| Series | - | |
| ECCN Code | EAR99 | |
| Reach Compliance Code | compliant | |
| Configuration | Single | |
| Power Dissipation | 2.307 | |
| Power - Max | 2307 W | |
| Input | Standard | |
| Current - Collector Cutoff (Max) | 4 mA | |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
| Power Dissipation-Max (Abs) | 2307 W | |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 400A | |
| Collector Current-Max (IC) | 610 A | |
| Continuous Collector Current | 610 | |
| IGBT Type | Trench Field Stop | |
| Collector-Emitter Voltage-Max | 1200 V | |
| NTC Thermistor | No | |
| Gate-Emitter Voltage-Max | 20 V | |
| Input Capacitance (Cies) @ Vce | 24.6 nF @ 25 V | |
| VCEsat-Max | 2.2 V | |
| Product | IGBT Silicon Modules |