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Microchip Technology APTGLQ100DA120T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Modules | |
| Марка | ||
| Package / Case | SP1 | |
| Mounting Type | Chassis Mount | |
| Supplier Device Package | SP1 | |
| Collector- Emitter Voltage VCEO Max | 1200 V | |
| Collector-Emitter Saturation Voltage | 2.05 V | |
| Continuous Collector Current at 25 C | 170 A | |
| Gate-Emitter Leakage Current | 150 nA | |
| Pd - Power Dissipation | 520 W | |
| Minimum Operating Temperature | - 40 C | |
| Maximum Operating Temperature | + 125 C | |
| Maximum Gate Emitter Voltage | 20 V | |
| Mounting Styles | Chassis Mount | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Unit Weight | 2.821917 oz | |
| Package | Bulk |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current-Collector (Ic) (Max) | 170 A | |
| Base Product Number | APTGLQ100 | |
| Mfr | Microchip Technology | |
| Product Status | Active | |
| Packaging | Tube | |
| Operating Temperature | -40°C ~ 175°C (TJ) | |
| Series | - | |
| Configuration | Single | |
| Power - Max | 520 W | |
| Input | Standard | |
| Current - Collector Cutoff (Max) | 50 µA | |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
| Vce(on) (Max) @ Vge, Ic | 2.42V @ 15V, 100A | |
| IGBT Type | Trench Field Stop | |
| NTC Thermistor | Yes | |
| Input Capacitance (Cies) @ Vce | 6.15 nF @ 25 V | |
| Product | IGBT Silicon Modules |