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APTGT150TA60PG Технические параметры

Microchip Technology  APTGT150TA60PG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Lifecycle Status Production (Last Updated: 2 months ago)
Package / Case SP6-P
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Number of Pins 21Pins
Supplier Device Package SP6-P
RoHS Details
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 1.5 V
Continuous Collector Current at 25 C 225 A
Gate-Emitter Leakage Current 400 nA
Pd - Power Dissipation 480 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 100 C
Maximum Gate Emitter Voltage 20 V
Mounting Styles Chassis Mount
Factory Pack QuantityFactory Pack Quantity 1
Unit Weight 3.880136 oz
Package Bulk
Current-Collector (Ic) (Max) 225 A
Base Product Number APTGT150
Mfr Microchip Technology
Свойство продукта Значение свойства
Product Status Active
Collector-Emitter Breakdown Voltage 600 V
Packaging Tube
Operating Temperature -40°C ~ 175°C (TJ)
Series -
Max Operating Temperature 175 °C
Min Operating Temperature -40 °C
Max Power Dissipation 480 W
Configuration 3-Phase
Power Dissipation 480
Power - Max 480 W
Input Standard
Collector Emitter Voltage (VCEO) 600 V
Max Collector Current 225 A
Current - Collector Cutoff (Max) 250 µA
Voltage - Collector Emitter Breakdown (Max) 600 V
Input Capacitance 9.2 nF
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 150A
Continuous Collector Current 225
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 9.2 nF @ 25 V
Product IGBT Silicon Modules
Radiation Hardening No
Просмотр сходства
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