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Microchip Technology APTGT300DA170D3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Modules | |
| Марка | ||
| Lifecycle Status | Production (Last Updated: 2 months ago) | |
| Package / Case | D3-11 | |
| Mounting Type | Chassis Mount | |
| Mount | Chassis Mount, Screw | |
| Number of Pins | 5Pins | |
| Supplier Device Package | D3 | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 1.7 kV | |
| Collector-Emitter Saturation Voltage | 2 V | |
| Continuous Collector Current at 25 C | 400 A | |
| Gate-Emitter Leakage Current | 400 nA | |
| Pd - Power Dissipation | 1.47 kW | |
| Minimum Operating Temperature | - 40 C | |
| Maximum Operating Temperature | + 125 C | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Mounting Styles | Chassis Mount | |
| Maximum Gate Emitter Voltage | 20 V | |
| Package | Bulk | |
| Current-Collector (Ic) (Max) | 530 A | |
| Base Product Number | APTGT300 | |
| Mfr | Microchip Technology |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Product Status | Active | |
| Collector-Emitter Breakdown Voltage | 1.7 kV | |
| Packaging | Bulk | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Series | - | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -40 °C | |
| Max Power Dissipation | 1.47 kW | |
| Configuration | Single | |
| Element Configuration | Single | |
| Power - Max | 1470 W | |
| Input | Standard | |
| Collector Emitter Voltage (VCEO) | 1.7 kV | |
| Max Collector Current | 530 A | |
| Current - Collector Cutoff (Max) | 8 mA | |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V | |
| Input Capacitance | 26 nF | |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 300A | |
| Continuous Collector Current | 400 | |
| IGBT Type | Trench Field Stop | |
| NTC Thermistor | No | |
| Input Capacitance (Cies) @ Vce | 26 nF @ 25 V | |
| Product | IGBT Silicon Modules |