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APTGT300H60G Технические параметры
Microchip Technology APTGT300H60G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Modules | |
| Марка | ||
| Lifecycle Status | Production (Last Updated: 2 months ago) | |
| Package / Case | SP6 | |
| Mounting Type | Chassis Mount | |
| Mount | Chassis Mount, Screw | |
| Surface Mount | NO | |
| Number of Pins | 12Pins | |
| Supplier Device Package | SP6 | |
| Number of Terminals | 12Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 600 V | |
| Collector-Emitter Saturation Voltage | 1.4 V | |
| Continuous Collector Current at 25 C | 430 A | |
| Gate-Emitter Leakage Current | 500 nA | |
| Pd - Power Dissipation | 1.15 kW | |
| Minimum Operating Temperature | - 40 C | |
| Maximum Operating Temperature | + 100 C | |
| Maximum Gate Emitter Voltage | 20 V | |
| Mounting Styles | Chassis Mount | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Unit Weight | 3.880136 oz | |
| Package | Bulk | |
| Current-Collector (Ic) (Max) | 430 A | |
| Base Product Number | APTGT300 | |
| Mfr | Microchip Technology | |
| Product Status | Active | |
| Schedule B | 8541290080, 8541500080/8541500080/8541500080/8541500080/8541500080 | |
| Collector-Emitter Breakdown Voltage | 600 V | |
| Package Description | FLANGE MOUNT, R-XUFM-X12 | |
| Package Style | FLANGE MOUNT | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | UNSPECIFIED | |
| Turn-on Time-Nom (ton) | 170 ns | |
| Turn-off Time-Nom (toff) | 320 ns | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | APTGT300H60G | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 4 Elements |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Risk Rank | 5.19 | |
| Packaging | Tube | |
| Operating Temperature | -40°C ~ 175°C (TJ) | |
| Series | - | |
| JESD-609 Code | e1 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN SILVER COPPER | |
| Max Operating Temperature | 175 °C | |
| Min Operating Temperature | -40 °C | |
| Additional Feature | AVALANCHE RATED | |
| Max Power Dissipation | 1.15 kW | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 12 | |
| JESD-30 Code | R-XUFM-X12 | |
| Qualification Status | Not Qualified | |
| Configuration | Full Bridge | |
| Power Dissipation | 1.15 | |
| Case Connection | ISOLATED | |
| Power - Max | 1150 W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Input | Standard | |
| Collector Emitter Voltage (VCEO) | 600 V | |
| Max Collector Current | 430 A | |
| Current - Collector Cutoff (Max) | 350 µA | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Input Capacitance | 24 nF | |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 300A | |
| Collector Current-Max (IC) | 430 A | |
| Continuous Collector Current | 430 | |
| IGBT Type | Trench Field Stop | |
| Collector-Emitter Voltage-Max | 600 V | |
| NTC Thermistor | No | |
| Input Capacitance (Cies) @ Vce | 24 nF @ 25 V | |
| Product | IGBT Silicon Modules | |
| Radiation Hardening | No |
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