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APTGT400U170D4G Технические параметры
Microchip Technology APTGT400U170D4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Modules | |
| Марка | ||
| Lifecycle Status | Production (Last Updated: 2 months ago) | |
| Package / Case | D4-5 | |
| Mounting Type | Chassis Mount | |
| Mount | Chassis Mount, Screw | |
| Surface Mount | NO | |
| Number of Pins | 4Pins | |
| Supplier Device Package | D4 | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 1.7 kV | |
| Collector-Emitter Saturation Voltage | 2 V | |
| Continuous Collector Current at 25 C | 800 A | |
| Gate-Emitter Leakage Current | 400 nA | |
| Pd - Power Dissipation | 2.08 kW | |
| Minimum Operating Temperature | - 40 C | |
| Maximum Operating Temperature | + 125 C | |
| Maximum Gate Emitter Voltage | 20 V | |
| Mounting Styles | Chassis Mount | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Unit Weight | 12.345887 oz | |
| Package | Bulk | |
| Current-Collector (Ic) (Max) | 800 A | |
| Base Product Number | APTGT400 | |
| Mfr | Microchip Technology | |
| Product Status | Active | |
| Collector-Emitter Breakdown Voltage | 1.7 kV | |
| Package Description | FLANGE MOUNT, R-XUFM-X4 | |
| Package Style | FLANGE MOUNT | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | UNSPECIFIED | |
| Turn-on Time-Nom (ton) | 400 ns | |
| Turn-off Time-Nom (toff) | 1200 ns | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | APTGT400U170D4G | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Risk Rank | 5.23 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Packaging | Bulk | |
| Operating Temperature | - | |
| Series | - | |
| JESD-609 Code | e1 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN SILVER COPPER | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -40 °C | |
| Additional Feature | AVALANCHE RATED | |
| Max Power Dissipation | 2.08 kW | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 4 | |
| JESD-30 Code | R-XUFM-X4 | |
| Qualification Status | Not Qualified | |
| Configuration | Single | |
| Element Configuration | Single | |
| Power Dissipation | 2.08 | |
| Case Connection | ISOLATED | |
| Power - Max | 2080 W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Input | Standard | |
| Collector Emitter Voltage (VCEO) | 1.7 kV | |
| Max Collector Current | 800 A | |
| Current - Collector Cutoff (Max) | 1 mA | |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V | |
| Input Capacitance | 33 nF | |
| Power Dissipation-Max (Abs) | 2080 W | |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 400A | |
| Collector Current-Max (IC) | 800 A | |
| Continuous Collector Current | 800 | |
| IGBT Type | Trench Field Stop | |
| Collector-Emitter Voltage-Max | 1700 V | |
| NTC Thermistor | No | |
| Gate-Emitter Voltage-Max | 20 V | |
| Input Capacitance (Cies) @ Vce | 33 nF @ 25 V | |
| VCEsat-Max | 2.4 V | |
| Product | IGBT Silicon Modules | |
| Radiation Hardening | No |
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