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APTGT50DDA120T3G Технические параметры

Microchip Technology  APTGT50DDA120T3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Lifecycle Status Production (Last Updated: 2 months ago)
Package / Case SP3F-32
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Surface Mount NO
Number of Pins 32Pins
Supplier Device Package SP3
Number of Terminals 25Terminals
Transistor Element Material SILICON
RoHS Details
Collector- Emitter Voltage VCEO Max 1200 V
Collector-Emitter Saturation Voltage 1.7 V
Continuous Collector Current at 25 C 75 A
Gate-Emitter Leakage Current 400 nA
Pd - Power Dissipation 270 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 125 C
Maximum Gate Emitter Voltage 20 V
Mounting Styles Chassis Mount
Factory Pack QuantityFactory Pack Quantity 1
Unit Weight 3.880136 oz
Package Bulk
Current-Collector (Ic) (Max) 75 A
Base Product Number APTGT50
Mfr Microchip Technology
Product Status Active
Schedule B 8541290080
Turn Off Delay Time 420 ns
Collector-Emitter Breakdown Voltage 1.2 kV
Package Description FLANGE MOUNT, R-XUFM-X25
Package Style FLANGE MOUNT
Moisture Sensitivity Levels 1
Package Body Material UNSPECIFIED
Turn-on Time-Nom (ton) 140 ns
Turn-off Time-Nom (toff) 610 ns
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number APTGT50DDA120T3G
Package Shape RECTANGULAR
Number of Elements 2 Elements
Part Life Cycle Code Active
Ihs Manufacturer MICROSEMI CORP
Свойство продукта Значение свойства
Risk Rank 5.17
Packaging Tube
Operating Temperature -40°C ~ 175°C (TJ)
Series -
JESD-609 Code e1
Pbfree Code Yes
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Operating Temperature 150 °C
Min Operating Temperature -40 °C
Additional Feature AVALANCHE RATED
Max Power Dissipation 270 W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Pin Count 25
JESD-30 Code R-XUFM-X25
Qualification Status Not Qualified
Configuration Dual
Element Configuration Dual
Power Dissipation 270 W
Case Connection ISOLATED
Turn On Delay Time 90 ns
Power - Max 270 W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2 kV
Max Collector Current 75 A
Current - Collector Cutoff (Max) 250 µA
Voltage - Collector Emitter Breakdown (Max) 1200 V
Input Capacitance 3.6 nF
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Collector Current-Max (IC) 75 A
Max Junction Temperature (Tj) 175 °C
Continuous Collector Current 75
IGBT Type Trench Field Stop
Collector-Emitter Voltage-Max 1200 V
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 3.6 nF @ 25 V
Product IGBT Silicon Modules
Height 12.1 mm
Radiation Hardening No
Просмотр сходства
APTGT50DDA120T3G brand manufacturers: Microchip Technology, Anli stock, APTGT50DDA120T3G reference price.Microchip Technology. APTGT50DDA120T3G parameters, APTGT50DDA120T3G Datasheet PDF and pin diagram description download.You can use the APTGT50DDA120T3G Transistors - IGBTs - Modules, DSP Datesheet PDF, find APTGT50DDA120T3G pin diagram and circuit diagram and usage method of function,APTGT50DDA120T3G electronics tutorials.You can download from the Anli.