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APTGT50DDA60T3G Технические параметры

Microchip Technology  APTGT50DDA60T3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Lifecycle Status Production (Last Updated: 2 months ago)
Package / Case SP3-32
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Number of Pins 32Pins
Supplier Device Package SP3
RoHS Details
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 1.5 V
Continuous Collector Current at 25 C 80 A
Gate-Emitter Leakage Current 600 nA
Pd - Power Dissipation 176 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 100 C
Maximum Gate Emitter Voltage 20 V
Mounting Styles Chassis Mount
Factory Pack QuantityFactory Pack Quantity 1
Package Bulk
Current-Collector (Ic) (Max) 80 A
Base Product Number APTGT50
Mfr Microchip Technology
Product Status Active
Свойство продукта Значение свойства
Collector-Emitter Breakdown Voltage 600 V
Packaging Tube
Operating Temperature -40°C ~ 175°C (TJ)
Series -
Max Operating Temperature 175 °C
Min Operating Temperature -40 °C
Max Power Dissipation 176 W
Configuration Dual
Element Configuration Dual
Power - Max 176 W
Input Standard
Collector Emitter Voltage (VCEO) 600 V
Max Collector Current 80 A
Current - Collector Cutoff (Max) 250 µA
Voltage - Collector Emitter Breakdown (Max) 600 V
Input Capacitance 3.15 nF
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
Continuous Collector Current 80
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 3.15 nF @ 25 V
Product IGBT Silicon Modules
Radiation Hardening No
Просмотр сходства
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