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APTGT50X60T3G Технические параметры
Microchip Technology APTGT50X60T3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Modules | |
| Марка | ||
| Package / Case | SP-3 | |
| Mounting Type | Chassis Mount | |
| Surface Mount | NO | |
| Supplier Device Package | SP3 | |
| Number of Terminals | 25Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 600 V | |
| Pd - Power Dissipation | 176 W | |
| Minimum Operating Temperature | - 40 C | |
| Maximum Operating Temperature | + 175 C | |
| Maximum Gate Emitter Voltage | 20 V | |
| Mounting Styles | Chassis Mount | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Unit Weight | 7.863095 oz | |
| Package | Bulk | |
| Current-Collector (Ic) (Max) | 80 A | |
| Base Product Number | APTGT50 | |
| Mfr | Microchip Technology | |
| Product Status | Active | |
| Package Description | FLANGE MOUNT, R-XUFM-X25 | |
| Package Style | FLANGE MOUNT | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | UNSPECIFIED | |
| Turn-on Time-Nom (ton) | 170 ns | |
| Turn-off Time-Nom (toff) | 310 ns | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | APTGT50X60T3G | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 6 Elements | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Risk Rank | 5.71 | |
| Packaging | Tube |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Temperature | -40°C ~ 175°C (TJ) | |
| Series | - | |
| JESD-609 Code | e1 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 25 | |
| JESD-30 Code | R-XUFM-X25 | |
| Qualification Status | Not Qualified | |
| Configuration | 3-Phase Inverter | |
| Power Dissipation | 176 | |
| Case Connection | ISOLATED | |
| Power - Max | 176 W | |
| Transistor Application | MOTOR CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Input | Standard | |
| Operating Temperature Range | - 40 C to + 175 C | |
| Current - Collector Cutoff (Max) | 250 µA | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Power Dissipation-Max (Abs) | 176 W | |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 50A | |
| Collector Current-Max (IC) | 80 A | |
| Continuous Collector Current | 80 | |
| IGBT Type | Trench Field Stop | |
| Collector-Emitter Voltage-Max | 600 V | |
| NTC Thermistor | Yes | |
| Gate-Emitter Voltage-Max | 20 V | |
| Input Capacitance (Cies) @ Vce | 3.15 nF @ 25 V | |
| VCEsat-Max | 1.9 V | |
| Product | IGBT Silicon Modules | |
| Height | 11.5 mm | |
| Length | 73.4 mm | |
| Width | 40.8 mm |
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