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ARF463AG Технические параметры
Microchip Technology ARF463AG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Package / Case | TO-247-3 | |
| Surface Mount | NO | |
| Supplier Device Package | TO-247 | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Details | |
| Transistor Polarity | N-Channel | |
| Id - Continuous Drain Current | 9 A | |
| Vds - Drain-Source Breakdown Voltage | 500 V | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Mounting Styles | Through Hole | |
| Channel Mode | Enhancement | |
| Fall Time | 4 ns | |
| Forward Transconductance - Min | 4 mS | |
| Pd - Power Dissipation | 180 W | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Vgs - Gate-Source Voltage | 30 V | |
| Vgs th - Gate-Source Threshold Voltage | 5 V | |
| Unit Weight | 1.340411 oz | |
| Continuous Drain Current Id | 9 | |
| Package | Tube | |
| Base Product Number | ARF463 | |
| Mfr | Microchip Technology | |
| Product Status | Active | |
| Voltage Rated | 500 V | |
| Rds On - Drain-Source Resistance | - | |
| Drain Current-Max (ID) | 9 A | |
| Risk Rank | 1.29 | |
| Turn-off Time-Max (toff) | 28 ns | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Life Cycle Code | Active | |
| Number of Elements | 1 Element | |
| Package Shape | RECTANGULAR | |
| Turn-on Time-Max (ton) | 18 ns | |
| Manufacturer Part Number | ARF463AG | |
| Rohs Code | Yes |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Style | FLANGE MOUNT | |
| Packaging | Tube | |
| Series | - | |
| Pbfree Code | No | |
| ECCN Code | EAR99 | |
| Type | RF Power MOSFET | |
| Current Rating (Amps) | 9A | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | compliant | |
| Frequency | 81.36MHz | |
| JESD-30 Code | R-PSFM-T3 | |
| Operating Frequency | 100 MHz | |
| Configuration | N-Channel | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 180 | |
| Case Connection | SOURCE | |
| Output Power | 100 W | |
| Current - Test | 50 mA | |
| Transistor Application | AMPLIFIER | |
| Rise Time | 4.1 ns | |
| Polarity/Channel Type | N-CHANNEL | |
| Operating Temperature Range | - 55 C to + 150 C | |
| JEDEC-95 Code | TO-247 | |
| Gain | 15 dB | |
| Drain Current-Max (Abs) (ID) | 9 A | |
| DS Breakdown Voltage-Min | 500 V | |
| Channel Type | N | |
| Power - Output | 100W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Noise Figure | - | |
| Voltage - Test | 125 V | |
| Feedback Cap-Max (Crss) | 12 pF | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| Power Gain-Min (Gp) | 13 dB |
Индекс :
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