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ARF476FL Технические параметры
Microchip Technology ARF476FL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Lifecycle Status | Production (Last Updated: 2 months ago) | |
| Package / Case | - | |
| Mount | Screw | |
| Surface Mount | YES | |
| Number of Pins | 8Pins | |
| Supplier Device Package | - | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Details | |
| Transistor Polarity | N-Channel | |
| Id - Continuous Drain Current | 10 A | |
| Vds - Drain-Source Breakdown Voltage | 500 V | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 175 C | |
| Forward Transconductance - Min | 3 mS | |
| Pd - Power Dissipation | 910 W | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Vgs - Gate-Source Voltage | 30 V | |
| Vgs th - Gate-Source Threshold Voltage | 3.3 V | |
| Unit Weight | 0.462535 oz | |
| Continuous Drain Current Id | 10 | |
| Package | Tray | |
| Base Product Number | ARF476 | |
| Mfr | Microchip Technology | |
| Product Status | Active | |
| Voltage Rated | 500 V | |
| Voltage, Rating | 500 V | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 12 ns | |
| Mounting Styles | Flange Mount | |
| Rds On - Drain-Source Resistance | - | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | UNSPECIFIED | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | ARF476FL | |
| Package Shape | RECTANGULAR | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Risk Rank | 2.27 | |
| Drain Current-Max (ID) | 10 A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Series | - | |
| Packaging | Bulk | |
| Pbfree Code | No | |
| ECCN Code | EAR99 | |
| Type | RF Power MOSFET | |
| Max Operating Temperature | 175 °C | |
| Min Operating Temperature | -55 °C | |
| Additional Feature | HIGH VOLTAGE | |
| Current Rating (Amps) | 10A | |
| Max Power Dissipation | 910 W | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Current Rating | 10 A | |
| Frequency | 128MHz | |
| JESD-30 Code | R-XDFM-F8 | |
| Qualification Status | Not Qualified | |
| Operating Frequency | 150 MHz | |
| Configuration | 2 N-Channel (Dual) Common Source | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 910 | |
| Output Power | 900 W | |
| Turn On Delay Time | 5.1 ns | |
| Current - Test | 15 mA | |
| Transistor Application | AMPLIFIER | |
| Test Current | 15 mA | |
| Rise Time | 4.1 ns | |
| Drain to Source Voltage (Vdss) | 500 V | |
| Polarity/Channel Type | N-CHANNEL | |
| Operating Temperature Range | - 55 C to + 175 C | |
| Continuous Drain Current (ID) | 10 A | |
| Gate to Source Voltage (Vgs) | 30 V | |
| Gain | 15 dB | |
| Max Frequency | 150 MHz | |
| DS Breakdown Voltage-Min | 500 V | |
| Channel Type | N | |
| Power - Output | 900W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Noise Figure | - | |
| Voltage - Test | 150 V | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| Test Voltage | 150 V | |
| Lead Free | Lead Free |
Индекс :
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