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JAN2N2222AP Технические параметры

Microchip Technology  JAN2N2222AP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18 (TO-206AA)
Mfr Microchip Technology
Package Bulk
Product Status Active
Current-Collector (Ic) (Max) 800 mA
Factory Pack QuantityFactory Pack Quantity 1
Manufacturer Microchip
Brand Microchip / Microsemi
Свойство продукта Значение свойства
RoHS N
Series -
Operating Temperature -65°C ~ 200°C (TJ)
Power - Max 500 mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Frequency - Transition -
Product Category Microchip Technology
Просмотр сходства
JAN2N2222AP brand manufacturers: Microchip Technology, Anli stock, JAN2N2222AP reference price.Microchip Technology. JAN2N2222AP parameters, JAN2N2222AP Datasheet PDF and pin diagram description download.You can use the JAN2N2222AP Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find JAN2N2222AP pin diagram and circuit diagram and usage method of function,JAN2N2222AP electronics tutorials.You can download from the Anli.