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JAN2N2907AUBP Технические параметры

Microchip Technology  JAN2N2907AUBP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mounting Type Surface Mount
Package / Case 3-SMD, No Lead
Supplier Device Package UB
Mfr Microchip Technology
Package Bulk
Product Status Active
Current-Collector (Ic) (Max) 600 mA
Factory Pack QuantityFactory Pack Quantity 1
Manufacturer Microchip
Brand Microchip / Microsemi
Свойство продукта Значение свойства
RoHS N
Series Military, MIL-PRF-19500/291
Operating Temperature -65°C ~ 200°C (TJ)
Power - Max 500 mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 10V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 60 V
Frequency - Transition -
Product Category Microchip Technology
JAN2N2907AUBP brand manufacturers: Microchip Technology, Anli stock, JAN2N2907AUBP reference price.Microchip Technology. JAN2N2907AUBP parameters, JAN2N2907AUBP Datasheet PDF and pin diagram description download.You can use the JAN2N2907AUBP Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find JAN2N2907AUBP pin diagram and circuit diagram and usage method of function,JAN2N2907AUBP electronics tutorials.You can download from the Anli.