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JAN2N5794UC/TR Технические параметры

Microchip Technology  JAN2N5794UC/TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Mounting Type Surface Mount
Package / Case 6-SMD, No Lead
Supplier Device Package UC
Mfr Microchip Technology
Package Tape & Reel (TR)
Product Status Active
Current-Collector (Ic) (Max) 600mA
Emitter- Base Voltage VEBO 6 V
Pd - Power Dissipation 600 mW
Transistor Polarity NPN
Maximum Operating Temperature + 200 C
Collector-Emitter Saturation Voltage 900 mV
Minimum Operating Temperature - 65 C
Factory Pack QuantityFactory Pack Quantity 1
Mounting Styles SMD/SMT
Manufacturer Microchip
Brand Microchip / Microsemi
Свойство продукта Значение свойства
DC Current Gain hFE Max 300 at 150 mA, 10 V
RoHS N
Collector- Emitter Voltage VCEO Max 40 V
Series Military, MIL-PRF-19500/495
Operating Temperature -65°C ~ 200°C (TJ)
Subcategory Transistors
Technology Si
Configuration Dual
Power - Max 600mW
Product Type BJTs - Bipolar Transistors
Transistor Type 2 NPN (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Current - Collector Cutoff (Max) 10μA (ICBO)
Vce Saturation (Max) @ Ib, Ic 900mV @ 30mA, 300mA
Voltage - Collector Emitter Breakdown (Max) 40V
Frequency - Transition -
Collector Base Voltage (VCBO) 75 V
Continuous Collector Current 600 mA
Product Category Bipolar Transistors - BJT
Просмотр сходства
JAN2N5794UC/TR brand manufacturers: Microchip Technology, Anli stock, JAN2N5794UC/TR reference price.Microchip Technology. JAN2N5794UC/TR parameters, JAN2N5794UC/TR Datasheet PDF and pin diagram description download.You can use the JAN2N5794UC/TR Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find JAN2N5794UC/TR pin diagram and circuit diagram and usage method of function,JAN2N5794UC/TR electronics tutorials.You can download from the Anli.