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Microchip Technology JANS2N5794UC technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - Bipolar (BJT) - Arrays | |
Марка | ||
Mounting Type | Surface Mount | |
Package / Case | 6-SMD, No Lead | |
Supplier Device Package | UC | |
Mfr | Microchip Technology | |
Package | Bulk | |
Product Status | Active | |
Current-Collector (Ic) (Max) | 600mA | |
Emitter- Base Voltage VEBO | 6 V | |
Pd - Power Dissipation | 600 mW | |
Transistor Polarity | NPN | |
Maximum Operating Temperature | + 200 C | |
Minimum Operating Temperature | - 65 C | |
Factory Pack QuantityFactory Pack Quantity | 1 | |
Mounting Styles | SMD/SMT | |
Manufacturer | Microchip | |
Brand | Microchip / Microsemi | |
DC Current Gain hFE Max | 300 at 150 mA, 10 V |
Свойство продукта | Значение свойства | |
---|---|---|
RoHS | N | |
Collector- Emitter Voltage VCEO Max | 40 V | |
Series | Military, MIL-PRF-19500/495 | |
Operating Temperature | -65°C ~ 200°C (TJ) | |
Subcategory | Transistors | |
Technology | Si | |
Configuration | Dual | |
Power - Max | 600mW | |
Product Type | BJTs - Bipolar Transistors | |
Transistor Type | 2 NPN (Dual) | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V | |
Current - Collector Cutoff (Max) | 10μA (ICBO) | |
Vce Saturation (Max) @ Ib, Ic | 900mV @ 30mA, 300mA | |
Voltage - Collector Emitter Breakdown (Max) | 40V | |
Frequency - Transition | - | |
Collector Base Voltage (VCBO) | 75 V | |
Continuous Collector Current | 600 mA | |
Product Category | Bipolar Transistors - BJT |