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JANSR2N3810U/TR Технические параметры

Microchip Technology  JANSR2N3810U/TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Mounting Type Surface Mount
Package / Case 6-SMD, No Lead
Supplier Device Package 6-SMD
Mfr Microchip Technology
Package Tape & Reel (TR)
Product Status Active
Current-Collector (Ic) (Max) 50mA
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 350 mW
Transistor Polarity PNP
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 100 at 10 uA, 5 V
Minimum Operating Temperature - 65 C
Factory Pack QuantityFactory Pack Quantity 50
Mounting Styles SMD/SMT
Manufacturer Microchip
Brand Microchip / Microsemi
Maximum DC Collector Current 50 mA
Свойство продукта Значение свойства
DC Current Gain hFE Max 450 at 100 uA, 5 V
RoHS N
Collector- Emitter Voltage VCEO Max 60 V
Series Military, MIL-PRF-19500/336
Operating Temperature -65°C ~ 200°C (TJ)
Packaging Reel
Subcategory Transistors
Technology Si
Configuration Dual
Power - Max 350mW
Product Type BJTs - Bipolar Transistors
Transistor Type 2 PNP (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1mA, 5V
Current - Collector Cutoff (Max) 10μA (ICBO)
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 100μA
Voltage - Collector Emitter Breakdown (Max) 60V
Frequency - Transition -
Collector Base Voltage (VCBO) 60 V
Product Category Bipolar Transistors - BJT
Просмотр сходства
JANSR2N3810U/TR brand manufacturers: Microchip Technology, Anli stock, JANSR2N3810U/TR reference price.Microchip Technology. JANSR2N3810U/TR parameters, JANSR2N3810U/TR Datasheet PDF and pin diagram description download.You can use the JANSR2N3810U/TR Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find JANSR2N3810U/TR pin diagram and circuit diagram and usage method of function,JANSR2N3810U/TR electronics tutorials.You can download from the Anli.