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LND150K1-G Технические параметры

Microchip Technology  LND150K1-G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 5 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Weight 1.437803g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 13mA Tj
Drive Voltage (Max Rds On, Min Rds On) 0V
Number of Elements 1 Element
Power Dissipation (Max) 360mW Ta
Turn Off Delay Time 100 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Element Configuration Single
Power Dissipation 360mW
Turn On Delay Time 90 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1000 Ω @ 500μA, 0V
Input Capacitance (Ciss) (Max) @ Vds 10pF @ 25V
Rise Time 450ns
Vgs (Max) ±20V
Fall Time (Typ) 1.3 μs
Continuous Drain Current (ID) 13mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
FET Feature Depletion Mode
Height 1.02mm
Length 3.04mm
Width 1.4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

LND150K1-G Документы

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