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LND150N3-G Технические параметры

Microchip Technology  LND150N3-G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3Pins
Weight 219.992299mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 30mA Tj
Drive Voltage (Max Rds On, Min Rds On) 0V
Number of Elements 1 Element
Power Dissipation (Max) 740mW Ta
Turn Off Delay Time 100 ns
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature HIGH INPUT IMPEDANCE
Свойство продукта Значение свойства
Terminal Position BOTTOM
Number of Channels 1Channel
Element Configuration Single
Power Dissipation 740mW
Turn On Delay Time 90 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1000 Ω @ 500μA, 0V
Input Capacitance (Ciss) (Max) @ Vds 10pF @ 25V
Rise Time 450ns
Vgs (Max) ±20V
Fall Time (Typ) 450 ns
Continuous Drain Current (ID) 30mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
FET Feature Depletion Mode
Height 5.33mm
Length 5.21mm
Width 4.19mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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LND150N3-G Документы

LND150N3-G brand manufacturers: Microchip Technology, Anli stock, LND150N3-G reference price.Microchip Technology. LND150N3-G parameters, LND150N3-G Datasheet PDF and pin diagram description download.You can use the LND150N3-G Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find LND150N3-G pin diagram and circuit diagram and usage method of function,LND150N3-G electronics tutorials.You can download from the Anli.