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LND150N3-G-P013 Технические параметры

Microchip Technology  LND150N3-G-P013 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Weight 453.59237mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 30mA Tj
Drive Voltage (Max Rds On, Min Rds On) 0V
Number of Elements 1 Element
Power Dissipation (Max) 740mW Ta
Turn Off Delay Time 100 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Position BOTTOM
Свойство продукта Значение свойства
JESD-30 Code O-PBCY-T3
Number of Channels 1Channel
Element Configuration Single
Turn On Delay Time 90 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1000 Ω @ 500μA, 0V
Input Capacitance (Ciss) (Max) @ Vds 10pF @ 25V
Rise Time 450ns
Drain to Source Voltage (Vdss) 500V
Vgs (Max) ±20V
Fall Time (Typ) 1.3 μs
Continuous Drain Current (ID) 30mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.03A
DS Breakdown Voltage-Min 500V
FET Feature Depletion Mode
Height 5.33mm
Length 5.21mm
Width 4.19mm
RoHS Status ROHS3 Compliant
Просмотр сходства

LND150N3-G-P013 Документы

LND150N3-G-P013 brand manufacturers: Microchip Technology, Anli stock, LND150N3-G-P013 reference price.Microchip Technology. LND150N3-G-P013 parameters, LND150N3-G-P013 Datasheet PDF and pin diagram description download.You can use the LND150N3-G-P013 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find LND150N3-G-P013 pin diagram and circuit diagram and usage method of function,LND150N3-G-P013 electronics tutorials.You can download from the Anli.