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LND150N8-G Технические параметры

Microchip Technology  LND150N8-G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 5 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4Pins
Weight 52.786812mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 30mA Tj
Drive Voltage (Max Rds On, Min Rds On) 0V
Number of Elements 1 Element
Power Dissipation (Max) 1.6W Ta
Turn Off Delay Time 100 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature HIGH INPUT IMPEDANCE
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PSSO-F3
Number of Channels 1Channel
Element Configuration Single
Power Dissipation 1.2W
Case Connection SOURCE
Turn On Delay Time 90 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1000 Ω @ 500μA, 0V
Input Capacitance (Ciss) (Max) @ Vds 10pF @ 25V
Rise Time 450ns
Vgs (Max) ±20V
Fall Time (Typ) 450 ns
Continuous Drain Current (ID) 30mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.03A
Drain to Source Breakdown Voltage 500V
FET Feature Depletion Mode
Height 1.6mm
Length 4.6mm
Width 2.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

LND150N8-G Документы

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