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MQ2N2609 Технические параметры
Microchip Technology MQ2N2609 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - JFETs | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-206AA, TO-18-3 Metal Can | |
| Surface Mount | NO | |
| Supplier Device Package | TO-18 (TO-206AA) | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | Microchip Technology | |
| Package | Bulk | |
| Product Status | Active | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Manufacturer | Microchip | |
| Brand | Microchip Technology | |
| RoHS | N | |
| Package Description | CYLINDRICAL, O-MBCY-W3 | |
| Package Style | CYLINDRICAL | |
| Package Body Material | METAL | |
| Operating Temperature-Max | 200 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | MQ2N2609 | |
| Package Shape | ROUND | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Risk Rank | 5.73 | |
| Part Package Code | BCY |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Series | - | |
| Operating Temperature | -65°C ~ 200°C (TJ) | |
| Packaging | Bulk | |
| HTS Code | 8541.21.00.95 | |
| Subcategory | Transistors | |
| Technology | Si | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| Reference Standard | MIL-19500/296 | |
| JESD-30 Code | O-MBCY-W3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | DEPLETION MODE | |
| Power - Max | 300 mW | |
| FET Type | P-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 10pF @ 5V | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Polarity/Channel Type | P-CHANNEL | |
| Product Type | JFETs | |
| JEDEC-95 Code | TO-206AA | |
| FET Technology | JUNCTION | |
| Current - Drain (Idss) @ Vds (Vgs=0) | 2 mA @ 5 V | |
| Voltage - Cutoff (VGS off) @ Id | 750 mV @ 1 μA | |
| Voltage - Breakdown (V(BR)GSS) | 30 V | |
| Product Category | JFET |
Индекс :
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