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Microchip Technology MQ2N4859 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - JFETs | |
| Марка | ||
| Lifecycle Status | Production (Last Updated: 2 months ago) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-206AA, TO-18-3 Metal Can | |
| Mount | Through Hole | |
| Number of Pins | 3Pins | |
| Supplier Device Package | TO-18 (TO-206AA) | |
| Mfr | Microchip Technology | |
| Product Status | Active | |
| Package | Bulk | |
| Vds - Drain-Source Breakdown Voltage | 30 V | |
| Pd - Power Dissipation | 360 mW | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 200 C | |
| Minimum Operating Temperature | - 65 C | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Drain-Source Current at Vgs=0 | 20 mA | |
| Mounting Styles | Through Hole | |
| Manufacturer | Microchip | |
| Brand | Microchip Technology | |
| Rds On - Drain-Source Resistance | 25 Ohms | |
| Maximum Drain Gate Voltage | 30 V | |
| Vgs - Gate-Source Breakdown Voltage | 30 V |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Gate-Source Cutoff Voltage | 10 VDC | |
| RoHS | Compliant | |
| Series | Military, MIL-PRF-19500/385 | |
| Operating Temperature | -65°C ~ 200°C (TJ) | |
| Packaging | Bulk | |
| Type | JFET | |
| Max Operating Temperature | 200 °C | |
| Min Operating Temperature | -65 °C | |
| Subcategory | Transistors | |
| Technology | Si | |
| Configuration | Single | |
| Element Configuration | Single | |
| Power - Max | 360 mW | |
| FET Type | N-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 18pF @ 10V | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Product Type | JFETs | |
| Gate to Source Voltage (Vgs) | -30 V | |
| Current - Drain (Idss) @ Vds (Vgs=0) | 50 mA @ 15 V | |
| Voltage - Cutoff (VGS off) @ Id | 4 V @ 500 pA | |
| Voltage - Breakdown (V(BR)GSS) | 30 V | |
| Resistance - RDS(On) | 25 Ohms | |
| Product Category | JFET | |
| Radiation Hardening | No |